SPN04N60S5 Infineon Technologies, SPN04N60S5 Datasheet - Page 6

• Manufacturer Part Number: SPN04N60S5
• Description: MOSFET N-CH 600V 0.8A SOT-223
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPN04N60S5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 950 mOhm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 800mA
• Vgs(th) (max) @ Id: 5.5V @ 200µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 600pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: SP000012414; SP000101882; SPN04N60S5T

5 Typ. output characteristic
I
parameter: t
7 Drain-source on-state resistance
R
parameter : I
Rev. 2.2
D
DS(on)
= f (V
A
5.5
4.5
3.5
2.5
1.5
0.5
8
4
2
0
4
3
2
1
0
-60
0
SPN04N60S5
DS
= f (T
); T
-20
p
D
j
= 10 µs, V
5
)
j
= 0.65 A, V
=150°C
20
98%
10
typ
60
GS
20V
12V
10V
9.5V
GS
15
100
= 10 V
V
°C
8.5V
8V
7.5V
7V
6.5V
6V
T
V
9V
j
DS
180
25
Page 6
6 Typ. drain-source on resistance
R
parameter: T
8 Typ. transfer characteristics
I
parameter: t
D
DS(on)
= f ( V
m
3.5
2.5
1.5
A
16
12
10
5
4
3
2
1
8
6
4
2
0
0
0
=f(I
GS
2
D
1
); V
)
p
j
=150°C, V
4
= 10 µs
2
DS
6
3
2 x I
8
4
D
10
GS
x R
5
12
SPN04N60S5
DS(on)max
14
6
2005-02-21
16
7
20V
12V
10V
9V
8.5V
8V
7.5V
7V
6.5V
6V
I
V
A
D
V
GS
8.5
20