SPN04N60S5 Infineon Technologies, SPN04N60S5 Datasheet
SPN04N60S5
Specifications of SPN04N60S5
SP000101882
SPN04N60S5T
Related parts for SPN04N60S5
SPN04N60S5 Summary of contents
Page 1
... Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation 25°C A Operating and storage temperature Rev. 2.2 Ordering Code Marking Q67040-S4211 04N60S5 Symbol puls jmax tot stg Page 1 SPN04N60S5 600 0.95 DS(on SOT-223 VPS05163 Value Unit A 0.8 0. ±20 30 1.8 W °C -55 ...
Page 2
... V DSS DS GS =25° =150° =20V, V =0V V GSS GS DS =10V, I =2.8A, V DS(on =25° =150° f=1MHz, open Drain R G Page 2 SPN04N60S5 Value Unit 20 V/ns Values Unit min. typ. max K/W - 110 - - - 260 °C Values Unit min. typ. max. 600 - - V - 700 - 3 ...
Page 3
... C o(tr) t =350V d(on =0.8A d(off =350V, I =0. =350V, I =0.8A 10V =350V, I =0. (plateau) DD Page 3 SPN04N60S5 Values min. typ. max 600 - 325 - =0/10V 130 - 30 - 4 while V is rising from 0 to 80% V oss DS while V is rising from 0 to 80% V oss DS 2005-02-21 Unit - S ...
Page 4
... Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Rev. 2 °C, unless otherwise specified j Symbol Conditions I =25° =0V =350V /dt=100A/µ Page 4 SPN04N60S5 Values Unit min. typ. max 0 0.85 1. 200 - ns - 1.2 - µC 2005-02-21 ...
Page 5
... Transient thermal impedance thJC p parameter K Rev. 2.2 2 Safe operating area parameter : 100 120 °C 160 Typ. output characteristic parameter 0.01 single pulse - Page 5 SPN04N60S5 ) DS =25° 0.001 0. 0 =25° µ 13V 2005-02- 11V ...
Page 6
... D SPN04N60S5 5.5 4.5 4 3.5 3 2.5 2 1.5 98% 1 typ 0.5 0 -60 - Rev. 2.2 6 Typ. drain-source on resistance R DS(on) parameter 8.5V 8V 7. Typ. transfer characteristics parameter °C 100 180 T j Page 6 SPN04N60S5 =f =150° 3.5 3 2 DS(on)max = 10 µ 20V 12V 10V 9V 8. ...
Page 7
... Rev. 2.2 10 Forward characteristics of body diode parameter Gate 12 Typ. capacitances parameter 100 °C 180 T j Page 7 SPN04N60S5 ) µ SPN04N60S5 °C typ 150 °C typ °C (98 150 °C (98 0.4 0.8 1.2 1 =0V, f=1 MHz ...
Page 8
... Typ. C stored energy oss E =f(V ) oss DS 3.5 µJ 2.5 2 1 100 200 300 Definition of diodes switching characteristics Rev. 2.2 400 V 600 V DS Page 8 SPN04N60S5 2005-02-21 ...
Page 9
... Rev. 2.2 Page 9 SPN04N60S5 2005-02-21 ...
Page 10
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2 Page 10 SPN04N60S5 2005-02-21 ...