BSP295E6327 Infineon Technologies, BSP295E6327 Datasheet - Page 4

• Manufacturer Part Number: BSP295E6327
• Description: MOSFET N-CH 60V 1.8A SOT223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP295E6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 1.8V @ 400µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 368pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSP295; BSP295INTR

1 Power dissipation
P
3 Safe operating area
I
parameter : D = 0 , T
D
tot
= f ( V
10
10
10
10
= f (T
W
1.9
1.6
1.4
1.2
0.8
0.6
0.4
0.2
A
-1
-2
1
0
1
0
10
0
BSP295
BSP295
0
DS
A
20
)
)
40
60
A
= 25 °C
80
10
1
100
120
V
DC
t p = 150.0µs
°C
T
V
1 ms
10 ms
A
DS
160
10
Page 4
2
Rev 1.3
2 Drain current
I
parameter: V
4 Transient thermal impedance
Z
parameter : D = t
D
thJA
= f (T
K/W
10
10
10
10
10
1.9
1.6
1.4
1.2
0.8
0.6
0.4
0.2
A
= f (t
-1
-2
1
0
2
1
0
10
0
BSP295
BSP295
A
-5
)
10
p
20
)
single pulse
-4
GS
10
40
³
-3
p
10 V
10
/T
60
-2
10
80
-1
10
100
0
10
1
2007-02-07
120
10
D = 0.50
BSP295
2
°C
0.20
0.10
0.05
0.02
0.01
T
t
p
A
s
160
10
4