BSP295E6327 Infineon Technologies, BSP295E6327 Datasheet - Page 2

• Manufacturer Part Number: BSP295E6327
• Description: MOSFET N-CH 60V 1.8A SOT223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP295E6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 300 mOhm @ 1.8A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 1.8V @ 400µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 368pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BSP295; BSP295INTR

1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Electrical Characteristics, at T
Parameter
Static Characteristics
Drain-source breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-source on-state resistance
V
V
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
SMD version, device on PCB:
@ min. footprint
@ 6 cm
D
GS
DS
DS
GS
GS
GS
=400µA
=60V, V
=60V, V
=0, I
=20V, V
=10V, I
=4.5V, I
2
D
cooling area
=250µA
D
GS
GS
D
DS
=1.8A
=1.8A
=0, T
=0, T
=0
j
j
=25°C
=150°C
1)
GS
= V
j
DS
= 25 °C, unless otherwise specified
Page 2
Rev 1.3
Symbol
V
V
I
I
R
Symbol
R
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
thJS
thJA
min.
min.
0.8
60
-
-
-
-
-
-
-
-
Values
Values
0.22
0.39
typ.
typ.
1.1
15
80
48
8
1
-
-
max.
max.
115
1.8
0.1
0.3
0.5
50
70
10
25
2007-02-07
-
BSP295
Unit
V
µA
nA
Unit
K/W