BSP295E6327 Infineon Technologies, BSP295E6327 Datasheet
BSP295E6327
Specifications of BSP295E6327
BSP295INTR
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BSP295E6327 Summary of contents
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SIPMOS Small-Signal-Transistor Feature · N-Channel · Enhancement mode · dv/dt rated • Pb-free lead plating; RoHS compliant Type Package PG-SOT-223 BSP295 Maximum Ratings Parameter Continuous drain current T =25° =70°C A Pulsed drain current T ...
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Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics Parameter Static Characteristics Drain-source breakdown voltage V =0, I =250µA GS ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate ...
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Power dissipation tot A BSP295 1.9 W 1.6 1.4 1.2 1 0.8 0.6 0.4 0 Safe operating area parameter ...
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Typ. output characteristic parameter ° 3 10V 2.7 2.4 2.1 1.8 1.5 3V 1.2 0.9 0.6 0 0.5 1 ...
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Drain-source on-state resistance DS(on) j parameter : BSP295 0.75 0.6 0.55 0.5 0.45 0.4 0.35 98% 0.3 0.25 typ 0.2 0.15 0.1 0.05 0 -60 -20 20 ...
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Typ. avalanche energy par 3 100 15 Drain-source breakdown voltage V ...
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... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...