STB8NM60N STMicroelectronics, STB8NM60N Datasheet - Page 15

• Manufacturer Part Number: STB8NM60N
• Description: MOSFET N-CH 600V 7A D2PAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STB8NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 650 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 560pF @ 50V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8771-2

STx8NM60N
DIM.
D1
A1
A2
b4
E1
e1
L1
L2
L4
V2
c2
A
D
E
H
R
b
c
e
L
min.
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.35
0.60
0
1
o
TO-252 (DPAK) mechanical data
mm.
5.10
4.70
2.28
2.80
0.80
0.20
typ
Package mechanical data
0068772_G
10.10
max.
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
6.60
4.60
8
1
o
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