STB12NM50FDT4 STMicroelectronics, STB12NM50FDT4 Datasheet - Page 4

• Manufacturer Part Number: STB12NM50FDT4
• Description: MOSFET N-CH 500V 12A D2PAK
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STB12NM50FDT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 25V
• Power - Max: 160W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5380-2; STB12NM50FDT4

Electrical characteristics
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Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
V
Symbol
Symbol
R
CASE
V
(BR)DSS
g
C
I
I
C
DS(on)
C
Q
GS(th)
Q
R
DSS
GSS
fs
Q
oss
iss
rss
gs
gd
G
g
(1)
=25°C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
STB12NM50FD/-1 - STP12NM50FD/FP - STW14NM50FD
I
V
V
V
V
V
V
V
V
V
V
(see Figure 11)
f=1 MHz Gate DC Bias= 0
test signal level = 20mV
open drain
D
GS
GS
DS
DS
DS
DS
DS
GS
DD
GS
= 1mA, V
= V
= 10V, I
=0
=400V, I
Test condictions
Test condictions
= Max rating,
= Max rating @125°C
= ±30V
=15V, I
=25V, f=1 MHz,
=10V
GS
, I
D
D
GS
D
D
= 6A
= 6A
= 250µA
= 3A
= 0
Min.
Min.
500
3
1000
Typ.
390
Typ.
0.32
9.8
20
12
3
7
2
4
Max.
Max.
±
0.4
100
10
1
5
Unit
Unit
nC
nC
nC
pF
pF
pF
µA
µA
nA
S
V
V
Ω
Ω