STN2NE10L STMicroelectronics, STN2NE10L Datasheet

MOSFET N-CH 100V 1.8A SOT-223

STN2NE10L

Manufacturer Part Number
STN2NE10L
Description
MOSFET N-CH 100V 1.8A SOT-223
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STN2NE10L

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
400 mOhm @ 1A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
1.8A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 5V
Input Capacitance (ciss) @ Vds
345pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

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Part Number:
STN2NE10L
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Quantity:
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STN2NE10L
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Part Number:
STN2NE10L
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ST
Quantity:
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STN2NE10L$4 SOT223
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Part Number:
STN2NE10L$A SOT223
Manufacturer:
ST
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Part Number:
STN2NE10L$A SOT223
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Order codes
General features
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size™" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
Applications
February 2007
STN2NE10L
Exceptional dv/dt capability
Avalanche rugged technology
100% avalanche tested
Low threshold drive
Switching application
Type
Part number
STN2NE10L
(@Tjmax)
V
100V
DSS
R
<0.4Ω
DS(on)
N2NE10L
Marking
1.8A
N-channel 100V - 0.33Ω -2A - SOT-223
I
D
Rev 5
Internal schematic diagram
STripFET™ Power MOSFET
Package
SOT-223
2
SOT-223
STN2NE10L
1
2
3
Tape & reel
Packaging
www.st.com
1/12
12

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STN2NE10L Summary of contents

Page 1

... Applications ■ Switching application Order codes Part number STN2NE10L February 2007 N-channel 100V - 0.33Ω -2A - SOT-223 STripFET™ Power MOSFET R I DS(on) D <0.4Ω 1.8A Internal schematic diagram Marking N2NE10L Rev 5 STN2NE10L SOT-223 Package Packaging SOT-223 Tape & reel 1/12 www.st.com 12 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STN2NE10L . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STN2NE10L 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT Derating factor (2) dv/dt Peak diode recovery voltage slope T Operating junction temperature J T Storage temperature stg 1 ...

Page 4

... DS V =80V =5V GS (see Figure 13) Parameter Test conditions V = =4.7Ω (see Figure 14 =4.7Ω (see Figure 14 =4.7Ω (see Figure 14) STN2NE10L Min. Typ. Max 100 GS ± = 250µ 0.33 0.38 0.45 Min. Typ. DS(on)max 345 = Min. Typ. =3.5A, ...

Page 5

... STN2NE10L Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) Forward on voltage Reverse recovery time rr Q Reverse recovery charge rr Reverse recovery current I RRM 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Parameter Test conditions ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characteristics Figure 5. Transconductance 6/12 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance STN2NE10L ...

Page 7

... STN2NE10L Figure 7. Gate charge vs. gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs. temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs. temperature 7/12 ...

Page 8

... Test circuit Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive waveform 8/12 Figure 13. Gate charge test circuit Figure 15. Unclamped Inductive load test circuit Figure 17. Switching time waveform STN2NE10L ...

Page 9

... STN2NE10L 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

Page 10

... STN2NE10L mils MIN. TYP. MAX. 89.4 90.6 91.7 179.9 181.1 182.3 7.9 15.7 23.6 24.8 25.6 26.4 59.1 63 66.9 12.6 114.2 118.1 122.1 26.4 27.6 28.7 263.8 275 ...

Page 11

... STN2NE10L 5 Revision history Table 8. Revision history Date 19-Oct-2005 05-March-2006 19-Sep-2006 01-Feb-2007 Revision 2 Preliminary datasheet 3 Modified value on Table 4 4 New template, no content change 5 Typo mistake on Table Revision history Changes 1. 11/12 ...

Page 12

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STN2NE10L ...

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