IRF7322D1 International Rectifier, IRF7322D1 Datasheet - Page 5
![MOSFET P-CH 20V 5.3A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7322D1
Manufacturer Part Number
IRF7322D1
Description
MOSFET P-CH 20V 5.3A 8-SOIC
Manufacturer
International Rectifier
Series
FETKY™r
Datasheet
1.IRF7322D1.pdf
(8 pages)
Specifications of IRF7322D1
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
62 mOhm @ 2.9A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.3A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
29nC @ 4.5V
Input Capacitance (ciss) @ Vds
780pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7322D1
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7322D1TRPBF
Manufacturer:
GOODSKY
Quantity:
3 000
www.irf.com
100
0.1
Fig 10. Typical On-Resistance Vs. Drain
10
0.00001
1
0.8
0.6
0.4
0.2
0.0
0.50
0.20
0.10
0.05
0.02
0.01
0
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
-I , Drain Current (A)
D
Current
8
V
GS
0.001
12
Power Mosfet Characteristics
= -2.7V
V
GS
t , Rectangular Pulse Duration (sec)
1
16
= -4.5V
0.01
20
A
Fig 11. Typical On-Resistance Vs. Gate
0.08
0.07
0.06
0.05
0.04
0.03
0.1
0.0
V
1. Duty factor D = t / t
2. Peak T = P
Notes:
GS
2.0
, Gate-to-Source Voltage (V)
1
J
Voltage
DM
x Z
1
4.0
thJA
P
2
I
DM
D
IRF7322D1
+ T
10
= -5.3A
A
t
1
t
6.0
2
100
5
8.0
A