SI4410DY International Rectifier, SI4410DY Datasheet - Page 7

• Manufacturer Part Number: SI4410DY
• Description: MOSFET N-CH 30V 10A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of SI4410DY

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.5 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 1585pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *SI4410DY

SO-8 Package Outline
SO-8 Part Marking Information
www.irf.com
N O T E S :
5
- C -
6
- A -
5
2. CONTROLLING DIMENSION : INCH.
1 . D I M E N S I O N I N G A N D T O L E R A N C I N G P E R A N S I Y 1 4 . 5 M - 1 9 8 2 .
3 . D I M E N S I O N S A R E S H O W N I N M I L L I M E T E R S ( I N C H E S ) .
4 . O U T L I N E C O N F O R M S T O J E D E C O U T L I N E M S - 0 1 2 A A .
E
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
D I M E N S I O N S I S T H E L E N G T H O F L E A D F O R S O L D E R I N G T O A S U B S T R A T E . .
D I M E N S I O N D O E S N O T I N C L U D E M O L D P R O T R U S I O N S
6 X
0.25 (.010)
e
8
1
B 8 X
7
2
- B -
D
6
3
5
M C A S B S
5
4
e 1
A 1
A
0.25 (.010)
H
0.10 (.004)
M
A M
8 X
L
K x 45°
6
8 X
C
1.27 ( .050 )
D I M
6.46 ( .255 )
A
A1
B
C
D
E
e
e 1
H
K
L
R E C O M M E N D E D F O O T P R I N T
3X
M I N
.0040
0.16
.0532
.014
.150
.011
.0075
.189
.2284
. 0 2 5 B A S I C
. 0 5 0 B A S I C
0°
I N C H E S
Si4410DY
0.72 (.028 )
M A X
.0098
.0688
.018
.0098
.196
.157
.2440
.019
.050
8°
8 X
M I L L I M E T E R S
1.78 (.070)
1.35
0.10
0.19
0.36
4.80
3.81
0.28
M I N
0 . 6 3 5 B A S I C
0.41
5.80
1 . 2 7 B A S I C
0°
8X
1.27
1.75
0.25
M A X
0.25
3.99
6.20
0.46
4.98
0.48
8°
7