IRFP9140N International Rectifier, IRFP9140N Datasheet - Page 7

MOSFET P-CH 100V 23A TO-247AC

IRFP9140N

Manufacturer Part Number
IRFP9140N
Description
MOSFET P-CH 100V 23A TO-247AC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFP9140N

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
117 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
23A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
97nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
140W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFP9140N

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V
GS
Re-Applied
Voltage
Reverse
Recovery
Current
*
Reverse Polarity of D.U.T for P-Channel
+
-
R
D.U.T
G
***
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Fig 14. For P-Channel HEXFETS
V
*
GS
P.W.
SD
DS
= 5.0V for Logic Level and 3V Drive Devices
Peak Diode Recovery dv/dt Test Circuit
Waveform
Waveform
Ripple
Body Diode
Period
Body Diode Forward
+
-
dv/dt controlled by R
I
D.U.T. - Device Under Test
Diode Recovery
5%
SD
Current
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
di/dt
Current Transformer
Low Stray Inductance
Ground Plane
Low Leakage Inductance
D =
-
G
Period
P.W.
+
IRFP9140N
[
[
[
V
V
I
SD
GS
DD
]
]
=10V
+
-
V
] ***
DD

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