IRFP9140N International Rectifier, IRFP9140N Datasheet
IRFP9140N
Specifications of IRFP9140N
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IRFP9140N Summary of contents
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... J T Storage Temperature Range STG Soldering Temperature, for 10 seconds Mounting torque, 6- screw Thermal Resistance Parameter R Junction-to-Case JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA IRFP9140N PRELIMINARY HEXFET TO-247AC Max. @ -10V GS @ -10V GS 0.91 -5.0 - 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typ. – ...
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... IRFP9140N Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...
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... Fig 3. Typical Transfer Characteristics 100 VGS TOP - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4. 0 rain-to-S ource V oltage ( Fig 2. Typical Output Characteristics 2 -19A D 2.0 1.5 1.0 0.5 0 -60 -40 - Junction T em perature (° Fig 4. Normalized On-Resistance Vs. Temperature IRFP9140N -4.5V 20µ 175° 100 V = -10V ...
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... IRFP9140N 3000 2500 oss ds gd 2000 1500 1000 500 rain-to-S ource V oltage ( Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 175° 25° 0.1 0.2 0.4 0.6 0.8 1 ource-to-D rain V oltage ( Fig 7. Typical Source-Drain Diode Forward Voltage 100 0 Fig 6. Typical Gate Charge Vs. 1000 TIO LIM ITE D ...
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... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case -10V Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit t d(on 10% 150 175 ° 90 Fig 10b. Switching Time Waveforms Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 IRFP9140N D.U. µ d(off ...
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... IRFP9140N -20V 0. Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Q G -10V Charge Fig 13a. Basic Gate Charge Waveform 1200 1000 800 600 15V 400 200 tarting T , Junction T em perature (°C ) Fig 12c. Maximum Avalanche Energy 12V V Fig 13b. Gate Charge Test Circuit ...
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... D.U.T. V Waveform DS Re-Applied Voltage Body Diode Inductor Curent Ripple *** V = 5.0V for Logic Level and 3V Drive Devices GS Fig 14. For P-Channel HEXFETS IRFP9140N Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + dv/dt controlled controlled by Duty Factor "D" SD D.U.T. - Device Under Test P ...
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... IRFP9140N Package Outline TO-247AC Outline Dimensions are shown in millimeters (inches) 1 5.90 (. 5.30 (. .30 (. .70 (. 4 4 .40 (. .00 (. 5. Part Marking Information TO-247AC ITH WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel 1883 732020 IR CANADA: 7321 Victoria Park Ave ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...