IRF7324D1 International Rectifier, IRF7324D1 Datasheet - Page 4
![MOSFET P-CH 20V 2.2A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7324D1
Manufacturer Part Number
IRF7324D1
Description
MOSFET P-CH 20V 2.2A 8-SOIC
Manufacturer
International Rectifier
Series
FETKY™r
Datasheet
1.IRF7324D1.pdf
(8 pages)
Specifications of IRF7324D1
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Diode (Isolated)
Rds On (max) @ Id, Vgs
270 mOhm @ 1.2A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.2A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
7.8nC @ 4.5V
Input Capacitance (ciss) @ Vds
260pF @ 15V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF7324D1
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7324D1TR
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRF7324D1TRPBF
Manufacturer:
International Rectifier
Quantity:
25 612
IRF7324D1
4
Fig 7. Typical On-Resistance Vs. Gate
0.4
0.3
0.2
0.1
0.0
1.5
1.0
0.5
2.0
-60 -40 -20
I D = -2.2A
V GS = -4.5V
-V GS , Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
4.0
0
Voltage
20
6.0
40
60
Power Mosfet Characteristics
80 100 120 140 160
8.0
I D = -2.2A
T J = 25°C
10.0
0.164
0.160
0.156
0.152
0.148
0.144
0.140
Fig 8. Maximum Safe Operating Area
100
10
0.0
1
Fig 6. Typical On-Resistance Vs.
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.5
-V DS , Drain-toSource Voltage (V)
-I D , Drain Current (A)
Drain Current
1.0
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V GS= - 4.5V
1.5
10
V GS= - 5.0V
www.irf.com
2.0
10msec
1msec
100µsec
2.5
100
3.0