BUK9620-100A,118 NXP Semiconductors, BUK9620-100A,118 Datasheet - Page 3
![MOSFET N-CH 100V 63A SOT404](/photos/5/31/53144/568-d2pak_sot404_sml.jpg)
BUK9620-100A,118
Manufacturer Part Number
BUK9620-100A,118
Description
MOSFET N-CH 100V 63A SOT404
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK9520-100A127.pdf
(15 pages)
Specifications of BUK9620-100A,118
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
19 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
63A
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
6385pF @ 25V
Power - Max
200W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Other names
934055653118
BUK9620-100A /T3
BUK9620-100A /T3
BUK9620-100A /T3
BUK9620-100A /T3
Philips Semiconductors
9397 750 07915
Product specification
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
P
T
der
mb
function of mounting base temperature.
P der
= 25 C; I
(%)
=
----------------------
P
120
100
tot 25 C
80
60
40
20
P
0
tot
0
DM
25
single pulse.
100%
50
I D
(A)
10 3
10 2
10
1
75
1
P
100
R DSon = V DS / I D
t p
125
T
150
T mb ( o C)
=
t p
T
t
175
03na19
200
Rev. 01 — 7 February 2001
BUK9520-100A; BUK9620-100A
D.C.
10
Fig 2. Normalized continuous drain current as a
V
I
der
GS
function of mounting base temperature.
I der
=
(%)
4.5 V
10 2
------------------ -
I
D 25 C
120
100
80
60
40
20
t p = 10 us
100 us
1 ms
10 ms
100 ms
I
0
D
0
25
100%
V DS (V)
50
TrenchMOS™ logic level FET
75
100
© Philips Electronics N.V. 2001. All rights reserved.
10 3
125
150
T mb ( o C)
175
03aa24
200
3 of 15