FQD7N10TM Fairchild Semiconductor, FQD7N10TM Datasheet - Page 5

• Manufacturer Part Number: FQD7N10TM
• Description: MOSFET N-CH 100V 5.8A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQD7N10TM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 350 mOhm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 5.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 7.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 250pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FQD7N10TMTR

©2008 Fairchild Semiconductor International
10V
10V
10V
10V
12V
12V
t
t
p
p
3mA
3mA
200nF
200nF
R
R
R
R
G
G
G
G
50KΩ
50KΩ
V
V
V
V
GS
GS
GS
GS
Unclamped Inductive Switching Test Circuit & Waveforms
V
V
300nF
300nF
I
I
I
V
V
DS
DS
D
D
D
DS
DS
Resistive Switching Test Circuit & Waveforms
Gate Charge Test Circuit & Waveform
DUT
DUT
DUT
DUT
Same Type
Same Type
DUT
DUT
L
L L
as DUT
as DUT
R
R
L
L
V
V
DD
DD
V
V
DD
DD
V
V
DS
DS
BV
BV
V
V
V
V
10V
10V
DSS
DSS
V
V
I
I
V
V
DD
DD
GS
GS
AS
AS
DS
DS
GS
GS
E
E
E
10%
10%
AS
AS
AS
Q
Q
90%
90%
=
=
=
gs
gs
t
t
d(on)
d(on)
----
----
----
----
1
1
1
1
2
2
2
2
t
t
on
on
L I
L I
L I
t
t
r
r
I
I
AS
AS
AS
D
D
Q
Q
(t)
(t)
t
t
2
2
2
Q
Q
p
p
g
g
gd
gd
Charge
Charge
--------------------
--------------------
BV
BV
BV
BV
DSS
DSS
DSS
DSS
t
t
- V
- V
d(off)
d(off)
t
t
DD
DD
off
off
Time
Time
t
t
f
f
Rev. A3, October 2008
V
V
DS
DS
(t)
(t)