RFG40N10 Fairchild Semiconductor, RFG40N10 Datasheet - Page 3

• Manufacturer Part Number: RFG40N10
• Description: MOSFET N-CH 100V 40A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of RFG40N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 300nC @ 20V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Performance Curves
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
1.2
1.0
0.8
0.6
0.4
0.2
100
100
0.1
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
10
80
60
40
20
0
1
0
0
1
0
FIGURE 5. SATURATION CHARACTERISTICS
V
DSS(MAX)
25
TEMPERATURE
V
V
2
= 100V
DS
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS,
T
, DRAIN TO SOURCE VOLTAGE (V)
50
C
DRAIN TO SOURCE VOLTAGE (V)
, CASE TEMPERATURE (
4
75
DS(ON)
10
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
T
C
6
= 25
DC OPERATION
Unless Otherwise Specified
o
125
o
T
SINGLE PULSE
T
C
C)
C
J
= MAX RATED
= 25
8
o
V
150
V
V
C
GS
GS
GS
= 5V
= 4V
= 6V
175
100
10
NOTE: Refer to application notes AN9321 and AN9322.
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING
100
100
10
40
32
24
16
80
60
40
20
1
0.01
0
8
0
25
0
If R = 0
t
If R ≠ 0
t
AV
AV
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
FIGURE 6. TRANSFER CHARACTERISTICS
DD
= (L)(I
= (L/R)LN[(I
= 15V
CASE TEMPERATURE
CAPABILITY
50
AS
2
V
)/(1.3 RATED BV
GS
RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Rev. C
t
T
AS
AV
C
, GATE TO SOURCE VOLTAGE (V)
, CASE TEMPERATURE (
, TIME IN AVALANCHE (ms)
*R)/(1.3 RATED BV
0.1
75
4
DSS
100
- V
DD
DSS
6
)
125
1
- V
o
C)
DD
) + 1]
8
150
175
10
10