FDS4435A Fairchild Semiconductor, FDS4435A Datasheet - Page 4
![MOSFET P-CH 30V 9A 8-SOIC](/photos/5/42/54236/261-8-soic_sml.jpg)
FDS4435A
Manufacturer Part Number
FDS4435A
Description
MOSFET P-CH 30V 9A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Type
Power MOSFETr
Datasheet
1.FDS4435A.pdf
(5 pages)
Specifications of FDS4435A
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
17 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 5V
Input Capacitance (ciss) @ Vds
2010pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.017Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Continuous Drain Current
9A
Power Dissipation
2.5W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS4435ATR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS4435A
Manufacturer:
FSC
Quantity:
50 000
Company:
Part Number:
FDS4435A
Manufacturer:
FSC
Quantity:
5 713
Part Number:
FDS4435A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS4435A-NL
Manufacturer:
FAIRCHILD
Quantity:
10 000
Part Number:
FDS4435A-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
0.01
100
10
0.1
8
6
4
2
0
10
1
0
0.1
I
D
R
= -8.8A
SINGLE PULSE
R
DS(ON)
JA
V
T
GS
A
= 125
5
= 25
0. 0 05
0. 0 02
0. 0 01
LIMIT
= -10V
0 .05
0 .02
0 .01
0.5
0.2
0.1
0.0 001
1
o
o
C/W
C
-V
10
DS
D = 0 .5
, DRAIN-SOURCE VOLTAGE (V)
Q
1
g
0 .2
, GATE CHARGE (nC)
0 .1
15
DC
0 . 0 5
10s
0. 0 2
0. 0 01
1s
0 .01
100ms
20
S i n g l e P u l s e
V
10ms
DS
= -5V
1ms
10
25
100 s
-15V
0 .01
30
-10V
35
100
t , TI M E (s e c )
0.1
1
50
40
30
20
10
0.001
2500
2000
1500
1000
0
500
0
0
1
0.01
5
-V
DS
SINGLE PULSE TIME (SEC)
, DRAIN TO SOURCE VOLTAGE (V)
0.1
10
P(pk )
10
D u t y C y c l e, D = t /t
T - T = P * R
R
J
R
J A
15
t
1
A
1
J A
(t) = r(t) * R
t
C
C
C
2
= 125°C / W
OSS
ISS
RSS
20
J A
SINGLE PULSE
100
R
( t )
10
J A
JA
1 2
T = 25°C
A
=125°C/W
25
300
f = 1 MHz
V
GS
100
= 0 V
30
300
D