FDC699P Fairchild Semiconductor, FDC699P Datasheet - Page 4

• Manufacturer Part Number: FDC699P
• Description: MOSFET P-CH 20V 7A SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC699P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22 mOhm @ 7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 5V
• Input Capacitance (ciss) @ Vds: 2640pF @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT FLMP, SuperSOT-6 FLMP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC699PTR; FDC699P_NL; FDC699P_NLTR; FDC699P_NLTR

Typical Characteristics
40
30
20
10
0
40
30
20
10
1.4
1.3
1.2
1.1
0.9
0.8
0
1
0
0.5
-50
Figure 1. On-Region Characteristics.
V
GS
Figure 5. Transfer Characteristics.
Figure 3. On-Resistance Variation
V
-3.5V
= -4.5V
DS
V
= -5V
GS
I
-25
D
= -7A
= -4.5V
0.5
1
-V
-V
withTemperature.
T
GS
DS
0
J
, JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
, DRAIN-SOURCE VOLTAGE (V)
-3.0V
T
A
= 125
1
25
1.5
o
-2.5V
C
-55
50
o
C
1.5
2
75
25
-2.0V
o
C
100
o
C)
2
2.5
125
2.5
3
150
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.045
0.035
0.025
0.015
0.01
100
0.05
0.04
0.03
0.02
0.01
0.1
10
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
1
with Source Current and Temperature.
2
1
0
1
0
V
Drain Current and Gate Voltage.
V
GS
GS
= 0V
T
= -2.0V
A
= 25
Gate-to-Source Voltage.
0.2
-V
SD
o
T
C
, BODY DIODE FORWARD VOLTAGE (V)
A
-V
= 125
10
2
GS
, GATE TO SOURCE VOLTAGE (V)
-2.5V
0.4
o
-I
C
D
, DRAIN CURRENT (A)
-3.0V
25
o
C
0.6
20
3
T
-55
A
-3.5V
= 125
o
C
0.8
o
C
-4.0V
30
4
FDC699P Rev C2 (W)
I
D
1
= -3.5A
-4.5V
1.2
40
5