IRF644S Vishay, IRF644S Datasheet - Page 3
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IRF644S
Manufacturer Part Number
IRF644S
Description
MOSFET N-CH 250V 14A D2PAK
Manufacturer
Vishay
Datasheet
1.IRF644S.pdf
(8 pages)
Specifications of IRF644S
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
280 mOhm @ 8.4A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
68nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF644S
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF644SPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
IRF644STRLPBF
Manufacturer:
IR
Quantity:
20 000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91040
S-Pending-Rev. B, 09-Oct-08
SPECIFICATIONS T
PARAMETER
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
91040_01
Fig. 1 - Typical Output Characteristics, T
10
10
1
0
10
Top
Bottom
-1
V
DS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
GS
, Drain-to-Source Voltage (V)
10
J
0
a
= 25 °C, unless otherwise noted
20 µs Pulse Width
T
C
=
10
25 °C
SYMBOL
1
V
I
Q
t
SM
I
t
on
SD
S
rr
rr
C
4.5 V
= 25 °C
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
J
= 25 °C, I
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
J
= 25 °C, I
TEST CONDITIONS
F
= 7.9 A, dI/dt = 100 A/µs
S
91040_02
= 14 A, V
Fig. 2 - Typical Output Characteristics, T
10
10
1
0
10
GS
-1
Top
Bottom
G
= 0 V
V
DS ,
b
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
D
S
V
IRF644S, SiHF644S
GS
Drain-to-Source Voltage (V)
b
10
0
MIN.
-
-
-
-
-
Vishay Siliconix
TYP.
250
2.3
20 µs Pulse Width
T
-
-
-
C
=
10
150 °C
1
www.vishay.com
MAX.
S
500
C
1.8
4.6
14
56
and L
= 150 °C
4.5 V
D
UNIT
)
µC
ns
A
V
3