IPB60R600C6 Infineon Technologies, IPB60R600C6 Datasheet - Page 13

• Manufacturer Part Number: IPB60R600C6
• Description: MOSFET N-CH 600V 7.3A TO263
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPB60R600C6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 2.4A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 7.3A
• Vgs(th) (max) @ Id: 3.5V @ 200µA
• Gate Charge (qg) @ Vgs: 20.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 440pF @ 100V
• Power - Max: 63W
• Mounting Type: Surface Mount
• Package / Case: TO-263-2, D²Pak (2 leads + Tab), TO-263AB
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.54ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 30V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Packages: PG-TO263-3
• Vds (max): 600.0 V
• Package: D2PAK (TO-263)
• Rds(on) @ Tj=25°c Vgs=10: 600.0 mOhm
• Id(max) @ Tc=25°c: 7.3 A
• Idpuls (max): 19.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant