IPD30N03S2L-07 Infineon Technologies, IPD30N03S2L-07 Datasheet - Page 3
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IPD30N03S2L-07
Manufacturer Part Number
IPD30N03S2L-07
Description
MOSFET N-CH 30V 30A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPD30N03S2L-07.pdf
(8 pages)
Specifications of IPD30N03S2L-07
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.7 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
2V @ 85µA
Gate Charge (qg) @ Vgs
68nC @ 10V
Input Capacitance (ciss) @ Vds
1900pF @ 25V
Power - Max
136W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
6.7 m Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
30 A
Power Dissipation
136 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000254463
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPD30N03S2L-07
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 1.0
1)
information see Application Note ANPS071E at www.infineon.com/optimos
2)
3)
connection. PCB is vertical in still air.
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Current is limited by bondwire; with an R
Defined by design. Not subject to production test.
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
2)
2)
2)
2)
2)
2)
Symbol
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
thJC
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
gd
g
rr
= 1.1K/W the chip is able to carry 111A at 25°C. For detailed
V
f =1 MHz
V
I
V
V
T
V
T
V
di
V
di
D
C
j
GS
DD
DD
GS
GS
R
R
=30 A, R
=25 °C
F
F
page 3
=25 °C
=15 V, I
=15 V, I
/dt =100 A/µs
/dt =100 A/µs
=0 V, V
=15 V, V
=24 V, I
=0 to 10 V
=0 V, I
Conditions
F
F
F
G
DS
=50 A,
=I
=I
D
=3.6
GS
=30 A,
=25 V,
S
S
=10 V,
,
,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
1900
typ.
760
200
3.1
0.9
10
30
40
16
16
51
40
50
6
-
-
IPD30N03S2L-07
max.
120
1.3
27
68
30
8
-
-
-
-
-
-
-
-
-
-
2006-07-18
Unit
pF
ns
nC
V
A
V
ns
nC