BSP322P L6327 Infineon Technologies, BSP322P L6327 Datasheet - Page 7

• Manufacturer Part Number: BSP322P L6327
• Description: MOSFET P-CH 100V 1A SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP322P L6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 800 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 1V @ 380µA
• Gate Charge (qg) @ Vgs: 16.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 372pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.8 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000212229

Rev 1.04
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
120
115
110
105
100
0.1
10
95
90
85
80
75
70
AV
1
-60
=f(T
); R
1
j
GS
); I
j(start)
=25 Ω
-20
D
=-250 µA
10
20
t
T
AV
j
60
[°C]
[µs]
125 °C
100
100
100 °C
140
25 °C
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
=-1 A pulsed
g s
5
- Q
Q
g
gate
Q
sw
[nC]
Q
20 V
g d
10
50 V
BSP322P
80 V
Q
g ate
2011-04-05
15