BSP322P L6327 Infineon Technologies, BSP322P L6327 Datasheet - Page 4
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BSP322P L6327
Manufacturer Part Number
BSP322P L6327
Description
MOSFET P-CH 100V 1A SOT-223
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSP322P_L6327.pdf
(9 pages)
Specifications of BSP322P L6327
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
800 mOhm @ 1A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
1A
Vgs(th) (max) @ Id
1V @ 380µA
Gate Charge (qg) @ Vgs
16.5nC @ 10V
Input Capacitance (ciss) @ Vds
372pF @ 25V
Power - Max
1.8W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.8 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1 A
Power Dissipation
1800 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000212229
Rev 1.04
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
10
10
1.5
0.5
10
10
2
1
0
DS
-1
-2
1
0
C
10
0
); T
)
limited by on-state
resistance
0
C
p
=25 °C; D =0
40
10
1
-V
80
T
A
DS
[°C]
[V]
120
10
2
DC
10 ms
100 µs
1 ms
100 ms
160
10
page 4
3
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
=f(t
10
1.2
0.8
0.6
0.4
0.2
10
10
10
C
1
0
-1
2
1
0
); |V
10
p
0
)
-5
0.02
0.01
GS
0.05
0.1
single pulse
10
|≥10 V
0.5
0.2
p
-4
/T
40
10
-3
10
80
T
-2
t
A
p
[°C]
[s]
10
-1
120
10
0
BSP322P
10
160
1
2011-04-05
10
2