BSP322P L6327 Infineon Technologies, BSP322P L6327 Datasheet - Page 4

• Manufacturer Part Number: BSP322P L6327
• Description: MOSFET P-CH 100V 1A SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP322P L6327

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 800 mOhm @ 1A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 1V @ 380µA
• Gate Charge (qg) @ Vgs: 16.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 372pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.8 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000212229

Rev 1.04
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
10
10
1.5
0.5
10
10
2
1
0
DS
-1
-2
1
0
C
10
0
); T
)
limited by on-state
resistance
0
C
p
=25 °C; D =0
40
10
1
-V
80
T
A
DS
[°C]
[V]
120
10
2
DC
10 ms
100 µs
1 ms
100 ms
160
10
page 4
3
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
=f(t
10
1.2
0.8
0.6
0.4
0.2
10
10
10
C
1
0
-1
2
1
0
); |V
10
p
0
)
-5
0.02
0.01
GS
0.05
0.1
single pulse
10
|≥10 V
0.5
0.2
p
-4
/T
40
10
-3
10
80
T
-2
t
A
p
[°C]
[s]
10
-1
120
10
0
BSP322P
10
160
1
2011-04-05
10
2