BSP322P L6327 Infineon Technologies, BSP322P L6327 Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single BSP322P L6327
Manufacturer Part Number
BSP322P L6327
Description
MOSFET P-CH 100V 1A SOT-223
Manufacturer
Infineon Technologies
Specifications of BSP322P L6327
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
800 mOhm @ 1A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
1A
Vgs(th) (max) @ Id
1V @ 380µA
Gate Charge (qg) @ Vgs
16.5nC @ 10V
Input Capacitance (ciss) @ Vds
372pF @ 25V
Power - Max
1.8W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.8 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1 A
Power Dissipation
1800 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000212229
Rev 1.04
Features
• P-Channel
• Enhancement mode
• Logic level
• Avalanche rated
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
ESD Class
Soldering temperature
IEC climatic category; DIN IEC 68-1
SIPMOS
Type
BSP322P
®
Small-Signal-Transistor
Package
PG-SOT-223
j
=25 °C, unless otherwise specified
Tape and Reel Information
L6327: 1000 pcs/reel
Symbol Conditions
I
I
E
V
P
T
D
D,pulse
j
AS
GS
tot
, T
stg
T
T
T
I
T
JESD22-A114-HBM
D
page 1
C
C
C
C
=-1 A, R
=25 °C
=70 °C
=25 °C
=25 °C
GS
=25 Ω
Product Summary
V
R
I
D
DS
DS(on),max
Marking
BSP322P
1A (250V to 500V)
-55 ... 150
55/150/56
Lead free
Yes
260 °C
Value
PG-SOT-223
±20
0.8
1.8
57
1
4
-100
800
BSP322P
-1
Packing
Non dry
Unit
A
mJ
V
W
°C
V
mΩ
A
2011-04-05
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BSP322P L6327 Summary of contents
SIPMOS ® Small-Signal-Transistor Features • P-Channel • Enhancement mode • Logic level • Avalanche rated • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 Type Package BSP322P PG-SOT-223 Maximum ratings =25 °C, unless otherwise specified ...
Parameter Thermal characteristics Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Transconductance 1) Device ...
Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode ...
Power dissipation =f tot C 2 1 Safe operating area =f =25 ° parameter limited by on-state ...
Typ. output characteristics =f =25 ° parameter - -3 Typ. transfer characteristics =f(V ...
Drain-source on-state resistance = DS(on 1.5 1 0.5 typ. 0 -60 - Typ. capacitances C =f MHz DS ...
Avalanche characteristics =25 Ω =f parameter: T j(start 0 Drain-source breakdown voltage =f =-250 µA V BR(DSS 120 115 110 105 100 95 ...
Package Outline: PG-SOT-223 Footprint: Dimensions in mm Rev 1.04 Packaging: page 8 BSP322P 2011-04-05 ...
... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...
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