BSS159N H6327 Infineon Technologies, BSS159N H6327 Datasheet - Page 3
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BSS159N H6327
Manufacturer Part Number
BSS159N H6327
Description
MOSFET N-CH 60V 230MA SOT23
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet
1.BSS159N_L6327.pdf
(9 pages)
Specifications of BSS159N H6327
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Depletion Mode
Rds On (max) @ Id, Vgs
3.5 Ohm @ 160mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
230mA
Vgs(th) (max) @ Id
2.4V @ 26µA
Gate Charge (qg) @ Vgs
2.9nC @ 5V
Input Capacitance (ciss) @ Vds
44pF @ 25V
Power - Max
360mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Rev. 1.32
Parameter
Dynamic characteristics
Input capacitance
Dynamic characteristics
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
gd
g
rr
V
f =1 MHz
V
V
I
V
V
T
V
T
V
di
D
page 3
A
j
GS
DD
GS
DD
GS
GS
R
=0.16 A, R
=25 °C
F
=25 °C
=30 V, I
/dt =100 A/µs
=-10 V, V
=25 V,
=-3…7 V,
=40 V, I
=-3 to 5 V
=-3 V, I
F
F
=0.16 A,
D
=0.16 A,
G
=0.16 A,
DS
=6 Ω
=25 V,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
-0.14
0.14
0.79
10.4
typ.
8.3
3.9
3.1
2.9
0.7
2.2
3.3
33
9
9
-
-
max.
0.21
0.20
0.81
5.9
4.7
4.4
1.1
2.9
1.2
4.1
44
11
13
13
13
-
BSS159N
Unit
pF
ns
nC
V
A
V
ns
nC
2006-12-11