HAT2167H-EL-E Renesas Electronics America, HAT2167H-EL-E Datasheet - Page 7

• Manufacturer Part Number: HAT2167H-EL-E
• Description: MOSFET N-CH 30V 40A LFPAK
• Manufacturer: Renesas Electronics America

Specifications of HAT2167H-EL-E

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.5 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 17nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2700pF @ 10V
• Power - Max: 20W
• Mounting Type: Surface Mount
• Package / Case: LFPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

HAT2167H
Rev.5.00 Sep 20, 2005 page 5 of 7
Vin
15 V
50
40
30
20
10
0
Source to Drain Voltage
Reverse Drain Current vs.
0.4
Source to Drain Voltage
Avalanche Test Circuit
5 V
10 V
0.03
0.01
V
Monitor
0.3
0.1
50 Ω
DS
3
1
10 µ
0.8
Rg
0.5
D = 1
V
GS
1.2
= 0
Normalized Transient Thermal Impedance vs. Pulse Width
100 µ
D. U. T
Pulse Test
I
Monitor
V
1.6
AP
SD
L
(V)
2.0
1 m
V
DD
Pulse Width PW (s)
10 m
0
V
50
40
30
20
10
DD
0
25
P
θch - c(t) = γs (t) • θch - c
θch - c = 6.25°C/ W, Tc = 25°C
DM
Channel Temperature Tch (°C)
Maximum Avalanche Energy vs.
100 m
Channel Temperature Derating
E
AR
I
50
AP
=
Avalanche Waveform
1
2
PW
T
I
D
L • I
75
AP
1
2
100
•
Tc = 25°C
D =
V
I
V
duty < 0.1 %
Rg ≥ 50 Ω
AP
DSS
DD
PW
V
= 20 A
T
DSS
= 15 V
125
– V
10
DD
V
DS
150
V
(BR)DSS