IXFL60N60 IXYS, IXFL60N60 Datasheet
IXFL60N60
Manufacturer Part Number
IXFL60N60
Description
MOSFET N-CH 600V 60A ISOPLUS264
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFL60N60.pdf
(2 pages)
Specifications of IXFL60N60
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
80 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
4V @ 8mA
Gate Charge (qg) @ Vgs
380nC @ 10V
Input Capacitance (ciss) @ Vds
10000pF @ 25V
Power - Max
700W
Mounting Type
Through Hole
Package / Case
ISOPLUS264™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.08 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
60 A
Power Dissipation
700 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
60
Rds(on), Max, Tj=25°c, (?)
0.08
Ciss, Typ, (pf)
15000
Qg, Typ, (nc)
380
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
694
Rthjc, Max, (ºc/w)
0.18
Package Style
ISOPLUS264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerFET
ISOPLUS264
(Electrically Isolated Backside)
Single Die MOSFET
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
F
T
T
T
V
M
Weight
Symbol
V
V
I
I
R
© 2003 IXYS All rights reserved
DM
D25
AR
GSS
DSS
JM
AR
C
J
stg
DSS
DGR
GS
GSM
AS
D
ISOL
GH(th)
DSS
d
DS(on)
T
T
T
T
T
I
T
Test Conditions
T
T
Continuous
Transient
T
Mouting Force
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
Test Conditions
V
V
V
V
V
V
Notes 1, 2
S
ISOL
C
C
C
C
C
J
C
J
J
GS
GS
GS
DS
GS
DS
= 25°C, Chip capability
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
= 25°C to 150°C
= 25°C to 150°C; R
≤ I
≤ 150°C, R
= 25°C
≤ 1 mA
DM
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
TM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
Power MOSFETs
D
D
DC
D
= 3 mA
TM
G
= 8 mA
, V
= I
= 2 Ω
DS
T
t = 1 min
t = 1 s
= 0
GS
= 1 MΩ
DD
T
T
(T
≤ V
J
J
J
= 25°C
= 125°C
= 25°C, unless otherwise specified)
DSS
JM
,
min.
30...150/7...33
600
2.0
Characteristic Values
IXFL 60N60
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
2500
3000
600
600
±20
±30
240
700
150
60
60
64
4
5
8
max.
±200
100
4.0
80
2
V/ns
N/lb
mJ
mΩ
mA
V~
V~
°C
°C
°C
nA
µA
V
W
V
V
V
V
V
A
A
A
g
J
ISOPLUS-264
Features
Applications
Advantages
V
I
R
D25
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<30pF)
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
AC motor control
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Easy assembly
Space savings
High power density
G = Gate
S = Source
DSS
DS(on)
G
DS (on)
D
S
HDMOS
= 600
=
=
TM
D = Drain
60
80 mΩ Ω Ω Ω Ω
TM
(Backside)
process
DS99093(10/03)
A
V
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IXFL60N60 Summary of contents
Page 1
... GH(th ± GSS DSS DS DSS DS(on Notes 1, 2 © 2003 IXYS All rights reserved IXFL 60N60 Maximum Ratings 600 = 1 MΩ 600 ±20 ±30 60 240 ≤ DSS 700 30...150/7...33 -55 ... +150 150 -55 ... +150 2500 3000 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 8 Characteristic Values (T = 25° ...
Page 2
... D D25 190 0.18 0.05 Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max 100 V R 1.5 10 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 IXFL60N60 ISOPLUS 264 OUTLINE K/W K 240 A 1.3 ...