IXTH102N20T IXYS, IXTH102N20T Datasheet - Page 5

• Manufacturer Part Number: IXTH102N20T
• Description: MOSFET N-CH 200V 102A TO-247
• Manufacturer: IXYS
• Series: TrenchHV™r

Specifications of IXTH102N20T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 23 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 102A
• Vgs(th) (max) @ Id: 4.5V @ 1mA
• Gate Charge (qg) @ Vgs: 114nC @ 10V
• Input Capacitance (ciss) @ Vds: 6800pF @ 25V
• Power - Max: 750W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.023 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 102 A
• Power Dissipation: 750 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 102
• Rds(on), Max, Tj=25°c, (?): 0.023
• Ciss, Typ, (pf): 6800
• Qg, Typ, (nc): 114
• Trr, Typ, (ns): 130
• Trr, Max, (ns): -
• Pd, (w): 750
• Rthjc, Max, (k/w): 0.20
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2007 IXYS CORPORATION, All rights reserved
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27
26
25
24
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22
21
20
19
18
34
32
30
28
26
24
22
20
27
26
25
24
23
22
21
50
2
25
Switching Times vs. Gate Resistance
55
t
T
V
Switching Times vs. Drain Current
r
J
DS
35
3
= 125ºC, V
I
Rise Time vs. Junction Temperature
= 100V
D
60
Fig. 17. Resistive Turn-off
= 102A, 51A
Fig. 15. Resistive Turn-on
T
T
T
T
I
45
J
J
J
J
D
4
= 125ºC
= 25ºC
= 25ºC
= 125ºC
65
t
= 51A
d(on)
Fig. 13. Resistive Turn-on
GS
55
T
70
- - - -
J
= 15V
5
I
- Degrees Centigrade
D
R
I
D
- Amperes
75
G
65
= 102A
- Ohms
6
80
t
R
V
75
f
G
DS
= 2.5 Ω , V
85
7
= 100V
85
90
t
8
d(off)
95
GS
95
- - - -
= 15V
R
V
V
9
G
GS
DS
100 105
105
= 2.5 Ω
= 100V
= 15V
10
115
IXTH102N20T IXTQ102N20T IXTV102N20T
70
67
64
61
58
55
52
49
46
43
40
26
25
24
23
22
21
20
19
125
26
25
24
23
22
21
20
19
18
27
26
25
24
23
22
21
75
70
65
60
55
50
45
40
35
30
25
20
15
25
50
Switching Times vs. Junction Temperature
2
Switching Times vs. Gate Resistance
35
55
t
R
V
t
T
V
R
V
V
f
J
f
G
DS
DS
G
GS
DS
= 125ºC, V
3
= 2.5 Ω , V
= 2.5 Ω
45
= 100V
= 100V
= 100V
= 15V
Fig. 18. Resistive Turn-off
60
Fig. 16. Resistive Turn-off
Rise Time vs. Drain Current
T
4
55
Fig. 14. Resistive Turn-on
t
J
t
d(off)
I
65
d(off)
D
- Degrees Centigrade
GS
GS
= 51A, 102A
- - - -
- - - -
65
= 15V
= 15V
5
R
70
I
D
G
- Amperes
- Ohms
75
I
I
75
D
6
D
= 102A
= 51A
85
80
IXYS REF: T_102N20T (7W) 4-13-07-A.xls
7
95
85
8
T
T
J
J
105 115 125
= 25ºC
= 125ºC
90
9
95
10
100 105
160
150
140
130
120
110
100
90
80
70
60
50
40
75
70
65
60
55
50
45
40
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