IXTH102N20T IXYS, IXTH102N20T Datasheet - Page 2

• Manufacturer Part Number: IXTH102N20T
• Description: MOSFET N-CH 200V 102A TO-247
• Manufacturer: IXYS
• Series: TrenchHV™r

Specifications of IXTH102N20T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 23 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 102A
• Vgs(th) (max) @ Id: 4.5V @ 1mA
• Gate Charge (qg) @ Vgs: 114nC @ 10V
• Input Capacitance (ciss) @ Vds: 6800pF @ 25V
• Power - Max: 750W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.023 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 102 A
• Power Dissipation: 750 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 102
• Rds(on), Max, Tj=25°c, (?): 0.023
• Ciss, Typ, (pf): 6800
• Qg, Typ, (nc): 114
• Trr, Typ, (ns): 130
• Trr, Max, (ns): -
• Pd, (w): 750
• Rthjc, Max, (k/w): 0.20
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
T
I
I
V
t
Notes: 1.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
PLUS220 (IXTV) Outline
d(on)
r
d(off)
f
S
SM
rr
fs
J
iss
oss
rss
thJC
thCS
SD
g(on)
gs
gd
The product presented herein is under development. The Technical Specifications offered
are derived from data gathered during objective characterizations of preliminary engineer-
ing lots; but also may yet contain some information supplied during a pre-production
design evaluation. IXYS reserves the right to change limits, test conditions, and dimen-
sions without notice.
J
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
2. On through-hole packages, R
location must be 5 mm or less from the package body.
Pulse test, t ≤ 300 ms, duty cycle, d ≤ 2 %;
V
V
Resistive Switching Times
V
R
V
V
Pulse width limited by T
I
I
V
Test Conditions
Test Conditions
F
F
DS
GS
GS
GS
GS
R
G
= 50 A, V
= 50 A, -di/dt = 100 A/μs
PRELIMINARY TECHNICAL INFORMATION
= 50 V, V
= 10 V; I
= 2.5 Ω (External)
= 10 V, V
= 0 V, V
= 10 V, V
= 0 V
GS
D
DS
GS
DS
= 0.5 I
DS
= 0 V, Note 1
= 25 V, f = 1 MHz
= 0 V
= 0.5 V
4,835,592
4,881,106
= 0.5 V
D25
, Note 1
DSS
DSS
JM
4,931,844
5,017,508
5,034,796
, I
, I
DS(on)
D
D
= 25 A
= 0.5 I
Kelvin test contact
5,049,961
5,063,307
5,187,117
D25
IXTH102N20T IXTQ102N20T IXTV102N20T
Min.
Min.
5,237,481
5,381,025
5,486,715
Characteristic Values
55
Characteristic Values
6800
Typ.
Typ.
0.25
722
126
114
130
6,162,665
6,259,123 B1
6,306,728 B1
92
19
26
50
25
34
31
Max.
0.20 °C/W
Max.
102
330
1.2
°C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
TO-247AD Outline
Pins: 1 - Gate
TO-3P (IXTQ) Outline
6,683,344
6,710,405 B2 6,759,692
6,710,463
Terminals: 1 - Gate
3 - Source 4, TAB - Drain
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
ÆP
Q
R
S
1
2
1
2
20.80
15.75
19.81
Min.
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
6,727,585
6,771,478 B2 7,071,537
Millimeter
4.7
2.2
2.2
1.0
1
3 - Source
.4
2 - Drain
2
21.46
16.26
20.32
Max.
3
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
.8
7,005,734 B2
7,063,975 B2
0.205 0.225
0.232 0.252
2 - Drain
Tab - Drain
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216
7,157,338B2