IRL8113SPBF International Rectifier, IRL8113SPBF Datasheet - Page 7
![MOSFET N-CH 30V 105A D2PAK](/photos/5/40/54080/21-d2pak_smd-220_sml.jpg)
IRL8113SPBF
Manufacturer Part Number
IRL8113SPBF
Description
MOSFET N-CH 30V 105A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRL8113LPBF.pdf
(13 pages)
Specifications of IRL8113SPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6 mOhm @ 21A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
105A
Vgs(th) (max) @ Id
2.25V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 4.5V
Input Capacitance (ciss) @ Vds
2840pF @ 15V
Power - Max
110W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
105A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
6mohm
Rds(on) Test Voltage Vgs
10V
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
7.1 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
105 A
Power Dissipation
110 W
Mounting Style
SMD/SMT
Gate Charge Qg
23 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRL8113SPBF
www.irf.com
Fig 16. Gate Charge Test Circuit
+
-
12V
V
GS
Same Type as D.U.T.
D.U.T
Current Regulator
.2µF
50KΩ
3mA
Fig 15.
+
-
Current Sampling Resistors
•
•
•
•
.3µF
SD
I
G
•
•
•
D.U.T.
I
-
D
G
HEXFET
+
+
-
V
DS
®
+
Power MOSFETs
-
Re-Applied
Voltage
Reverse
Recovery
Current
Vgs(th)
Qgs1 Qgs2
Vds
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Fig 17. Gate Charge Waveform
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
for N-Channel
Body Diode
Period
Qgd
Body Diode Forward
Diode Recovery
Current
dv/dt
Forward Drop
di/dt
Qgodr
D =
Period
P.W.
Vgs
V
V
I
SD
GS
DD
=10V
7
Id