IRL8113SPBF International Rectifier, IRL8113SPBF Datasheet - Page 6

• Manufacturer Part Number: IRL8113SPBF
• Description: MOSFET N-CH 30V 105A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL8113SPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 105A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2840pF @ 15V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 105A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 6mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 7.1 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 105 A
• Power Dissipation: 110 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 23 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRL8113SPBF

6
Fig 13a. Unclamped Inductive Test Circuit
Fig 13b. Unclamped Inductive Waveforms
Fig 12. On-Resistance Vs. Gate Voltage
40
30
20
10
0
I
2.0
AS
R G
20V
V
V DS
GS
V GS , Gate-to-Source Voltage (V)
t p
4.0
I AS
D.U.T
t p
0.01 Ω
L
6.0
T J = 125°C
T J = 25°C
15V
V
8.0
(BR)DSS
DRIVER
I D = 21A
+
-
V DD
10.0
A
1000
800
600
400
200
90%
V
0
10%
V
DS
Fig 14b. Switching Time Waveforms
Fig 14a. Switching Time Test Circuit
25
GS
Fig 13c. Maximum Avalanche Energy
Starting T J , Junction Temperature (°C)
t
50
d(on)
Duty Factor < 0.1%
Pulse Width < 1µs
Vs. Drain Current
V
GS
t
75
r
V
DS
100
t
d(off)
125
TOP
BOTTOM
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D.U.T
L
t
D
f
V
150
DD
11A
8.8A
I D
17A
+
-
175