IRL8113SPBF International Rectifier, IRL8113SPBF Datasheet - Page 5

• Manufacturer Part Number: IRL8113SPBF
• Description: MOSFET N-CH 30V 105A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRL8113SPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 21A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 105A
• Vgs(th) (max) @ Id: 2.25V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2840pF @ 15V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 105A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 6mohm
• Rds(on) Test Voltage Vgs: 10V
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 7.1 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 105 A
• Power Dissipation: 110 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 23 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRL8113SPBF

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0.0001
0.001
120
100
0.01
80
60
40
20
0.1
0
Fig 9. Maximum Drain Current vs.
1
1E-006
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
50
Case Temperature
0.20
0.10
0.05
0.02
0.01
T C , Case Temperature (°C)
SINGLE PULSE
( THERMAL RESPONSE )
75
LIMITED BY PACKAGE
1E-005
100
125
150
t 1 , Rectangular Pulse Duration (sec)
0.0001
175
τ
J
τ
Fig 10. Threshold Voltage vs. Temperature
J
τ
1
2.5
2.0
1.5
1.0
0.5
Ci= τi/Ri
τ
1
Ci= τi/Ri
-75 -50 -25
R
0.001
1
R
1
τ
2
τ
R
2
2
R
2
T J , Temperature ( °C )
0
R
τ
3
3
R
τ
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
3
3
25
τ
C
τ
50
Ri (°C/W)
0.01
0.430
0.397
0.493
75
I D = 250µA
100 125 150 175
0.000266
0.000685
0.007393
τi (sec)
5
0.1