IRL8113SPBF International Rectifier, IRL8113SPBF Datasheet - Page 5
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IRL8113SPBF
Manufacturer Part Number
IRL8113SPBF
Description
MOSFET N-CH 30V 105A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRL8113LPBF.pdf
(13 pages)
Specifications of IRL8113SPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6 mOhm @ 21A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
105A
Vgs(th) (max) @ Id
2.25V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 4.5V
Input Capacitance (ciss) @ Vds
2840pF @ 15V
Power - Max
110W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
105A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
6mohm
Rds(on) Test Voltage Vgs
10V
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
7.1 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
105 A
Power Dissipation
110 W
Mounting Style
SMD/SMT
Gate Charge Qg
23 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRL8113SPBF
www.irf.com
0.0001
0.001
120
100
0.01
80
60
40
20
0.1
0
Fig 9. Maximum Drain Current vs.
1
1E-006
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
50
Case Temperature
0.20
0.10
0.05
0.02
0.01
T C , Case Temperature (°C)
SINGLE PULSE
( THERMAL RESPONSE )
75
LIMITED BY PACKAGE
1E-005
100
125
150
t 1 , Rectangular Pulse Duration (sec)
0.0001
175
τ
J
τ
Fig 10. Threshold Voltage vs. Temperature
J
τ
1
2.5
2.0
1.5
1.0
0.5
Ci= τi/Ri
τ
1
Ci= τi/Ri
-75 -50 -25
R
0.001
1
R
1
τ
2
τ
R
2
2
R
2
T J , Temperature ( °C )
0
R
τ
3
3
R
τ
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
3
3
25
τ
C
τ
50
Ri (°C/W)
0.01
0.430
0.397
0.493
75
I D = 250µA
100 125 150 175
0.000266
0.000685
0.007393
τi (sec)
5
0.1