STD4NK60Z-1 STMicroelectronics, STD4NK60Z-1 Datasheet - Page 15
STD4NK60Z-1
Manufacturer Part Number
STD4NK60Z-1
Description
MOSFET N-CH 600V 4A IPAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STB4NK60ZT4.pdf
(20 pages)
Specifications of STD4NK60Z-1
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2 Ohm @ 2A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
4A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
26nC @ 10V
Input Capacitance (ciss) @ Vds
510pF @ 25V
Power - Max
70W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
2A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
1.76ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
2 Ohms
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
4 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD4NK60Z-1
Manufacturer:
ST
Quantity:
20 000
STB4NK60Zx, STD4NK60Zx, STP4NK60Z, STP4NK60ZFP
DIM.
(L1)
A1
V1
b2
b4
c2
e1
L2
D
H
A
b
E
e
L
c
min.
2.20
0.90
0.64
5.20
0.45
0.48
6.00
6.40
4.40
9.00
0.80
TO-251 (IPAK) mechanical data
16.10
mm.
2.28
0.80
10
typ
o
Package mechanical data
0068771_H
max.
2.40
1.10
0.90
0.95
5.40
0.60
0.60
6.20
6.60
4.60
9.40
1.20
15/20