IRF7424PBF International Rectifier, IRF7424PBF Datasheet - Page 6
![MOSFET P-CH 30V 11A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7424PBF
Manufacturer Part Number
IRF7424PBF
Description
MOSFET P-CH 30V 11A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Specifications of IRF7424PBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13.5 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
4030pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.0135Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Drain Current (max)
11A
Power Dissipation
2.5W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC
Channel Type
P
Current, Drain
-11 A
Gate Charge, Total
75 nC
Polarization
P-Channel
Resistance, Drain To Source On
13.5 Milliohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
150 ns
Time, Turn-on Delay
15 ns
Transconductance, Forward
17 S
Voltage, Breakdown, Drain To Source
-30 V
Voltage, Drain To Source
-30 V
Voltage, Forward, Diode
-1.2 V
Voltage, Gate To Source
±20 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7424PBF
Manufacturer:
MRXMASHSB
Quantity:
20
IRF7424PbF
6
0.035
0.030
0.025
0.020
0.015
0.010
Fig 14a. Basic Gate Charge Waveform
Fig 12. Typical On-Resistance Vs.
V
G
2.0
Q
GS
-V GS, Gate -to -Source Voltage (V)
Gate Voltage
4.0
Q
Charge
Q
GD
G
6.0
I D = -11A
8.0
10.0
0.030
0.025
0.020
0.015
0.010
Fig 14b. Gate Charge Test Circuit
Fig 13. Typical On-Resistance Vs.
12V
0
V
GS
Same Type as D.U.T.
V GS = -4.5V
Current Regulator
10
.2µF
Drain Current
-I D , Drain Current (A)
50KΩ
-3mA
Current Sampling Resistors
20
.3µF
I
G
30
V GS = -10V
D.U.T.
I
D
www.irf.com
40
+
-
V
DS
50
60