IRF7424PBF International Rectifier, IRF7424PBF Datasheet - Page 4

• Manufacturer Part Number: IRF7424PBF
• Description: MOSFET P-CH 30V 11A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRF7424PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.5 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 4030pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.0135Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 11A
• Power Dissipation: 2.5W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC
• Channel Type: P
• Current, Drain: -11 A
• Gate Charge, Total: 75 nC
• Polarization: P-Channel
• Resistance, Drain To Source On: 13.5 Milliohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 150 ns
• Time, Turn-on Delay: 15 ns
• Transconductance, Forward: 17 S
• Voltage, Breakdown, Drain To Source: -30 V
• Voltage, Drain To Source: -30 V
• Voltage, Forward, Diode: -1.2 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF7424PbF
4
100
0.1
10
6000
5000
4000
3000
2000
1000
1
0.4
Fig 5. Typical Capacitance Vs.
0
Fig 7. Typical Source-Drain Diode
1
Drain-to-Source Voltage
-V
T = 150 C
J
C iss
C oss
C rss
-V
SD
DS
0.6
,Source-to-Drain Voltage (V)
Forward Voltage
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
°
=
=
=
=
0V,
C
C
C
gs
gd
ds
0.8
T = 25 C
J
+ C
+ C
10
f = 1MHz
gd ,
gd
°
C
ds
1.0
V
GS
SHORTED
= 0 V
1.2
100
100
12
10
Fig 8. Maximum Safe Operating Area
10
8
6
4
2
0
1
0.1
0
Fig 6. Typical Gate Charge Vs.
I =
D
T
T
Single Pulse
A
J
= 25 C
= 150 C
-11A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
-V
DS
Q , Total Gate Charge (nC)
°
°
G
20
, Drain-to-Source Voltage (V)
1
BY R
V
V
40
DS
DS
DS(on)
=-24V
=-15V
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10
60
100us
1ms
10ms
80
100