IRF7424PBF International Rectifier, IRF7424PBF Datasheet - Page 4
![MOSFET P-CH 30V 11A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7424PBF
Manufacturer Part Number
IRF7424PBF
Description
MOSFET P-CH 30V 11A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Specifications of IRF7424PBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13.5 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
4030pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.0135Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Drain Current (max)
11A
Power Dissipation
2.5W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC
Channel Type
P
Current, Drain
-11 A
Gate Charge, Total
75 nC
Polarization
P-Channel
Resistance, Drain To Source On
13.5 Milliohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
150 ns
Time, Turn-on Delay
15 ns
Transconductance, Forward
17 S
Voltage, Breakdown, Drain To Source
-30 V
Voltage, Drain To Source
-30 V
Voltage, Forward, Diode
-1.2 V
Voltage, Gate To Source
±20 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7424PBF
Manufacturer:
MRXMASHSB
Quantity:
20
IRF7424PbF
4
100
0.1
10
6000
5000
4000
3000
2000
1000
1
0.4
Fig 5. Typical Capacitance Vs.
0
Fig 7. Typical Source-Drain Diode
1
Drain-to-Source Voltage
-V
T = 150 C
J
C iss
C oss
C rss
-V
SD
DS
0.6
,Source-to-Drain Voltage (V)
Forward Voltage
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
°
=
=
=
=
0V,
C
C
C
gs
gd
ds
0.8
T = 25 C
J
+ C
+ C
10
f = 1MHz
gd ,
gd
°
C
ds
1.0
V
GS
SHORTED
= 0 V
1.2
100
100
12
10
Fig 8. Maximum Safe Operating Area
10
8
6
4
2
0
1
0.1
0
Fig 6. Typical Gate Charge Vs.
I =
D
T
T
Single Pulse
A
J
= 25 C
= 150 C
-11A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
-V
DS
Q , Total Gate Charge (nC)
°
°
G
20
, Drain-to-Source Voltage (V)
1
BY R
V
V
40
DS
DS
DS(on)
=-24V
=-15V
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10
60
100us
1ms
10ms
80
100