IRF7220GTRPBF International Rectifier, IRF7220GTRPBF Datasheet

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IRF7220GTRPBF

Manufacturer Part Number
IRF7220GTRPBF
Description
MOSFET P-CH 12V 11A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7220GTRPBF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12 mOhm @ 11A, 4.5V
Drain To Source Voltage (vdss)
14V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
600mV @ 250µA
Gate Charge (qg) @ Vgs
125nC @ 5V
Input Capacitance (ciss) @ Vds
8075pF @ 10V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
P Channel
Continuous Drain Current Id
-11A
Drain Source Voltage Vds
-14V
On Resistance Rds(on)
8.2mohm
Rds(on) Test Voltage Vgs
-4.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7220GTRPBFTR
l
l
l
l
l
l
Thermal Resistance
Description
These P-Channel MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve the extremely low on-resistance per silicon
area. This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications.
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infrared, or wave soldering
techniques.
www.irf.com
V
I
I
I
P
P
E
V
T
R
D
D
DM
J,
DS
D
D
AS
GS
θJA
@ T
@ T
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
Halogen-Free
@T
@T
T
STG
A
A
A
A
= 70°C
= 25°C
= 25°C
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
With these improvements,
Parameter
Parameter
GS
GS
ƒ
@ -4.5V
@ -4.5V
G
S
S
S
1
2
3
4
Top View
IRF7220GPbF
HEXFET
8
7
6
5
-55 to + 150
Max.
Max.
0.02
-8.8
D
D
110
± 12
50
D
D
-14
-11
-88
2.5
1.6
A
SO-8
®
R
DS(on)
Power MOSFET
V
DSS
= 0.012Ω
= -14V
Units
Units
W/°C
°C/W
07/10/09
mJ
°C
V
A
V
1

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IRF7220GTRPBF Summary of contents

Page 1

Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Lead-Free l Halogen-Free l Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP -4.5V -4.0V -3.0V -2.0V -1.8V -1.6V 100 -1.4V BOTTOM -1.2V 10 -1.2V 1 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 T ...

Page 4

1kHz iss rss gd 9000 oss iss 8000 7000 6000 C oss 5000 ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL ...

Page 6

SO-8 Package Outline Dimensions are shown in milimeters (inches & " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PIAPSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ...

Page 7

SO-8 Tape and Reel Dimensions are shown in milimeters (inches) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS ...

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