APT10050B2VFRG Microsemi Power Products Group, APT10050B2VFRG Datasheet
APT10050B2VFRG
Specifications of APT10050B2VFRG
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APT10050B2VFRG Summary of contents
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POWER MOS V ® Power MOS new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching ...
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DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss 3 Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller ") Charge gd t (on) Turn-on Delay Time d t ...
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V GS =5.5V, 10V & 15V 4. 100 200 300 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS > (ON ...
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OPERATION HERE LIMITED (ON =+25° =+150°C SINGLE PULSE . 100 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA 20 ...