PSMN008-75B,118 NXP Semiconductors, PSMN008-75B,118 Datasheet - Page 3

• Manufacturer Part Number: PSMN008-75B,118
• Description: MOSFET N-CH 75V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN008-75B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 230W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 122.8nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 75V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0085 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 230000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056399118::PSMN008-75B /T3::PSMN008-75B /T3

NXP Semiconductors
PSMN008-75B_4
Product data sheet
Fig 1.
Fig 3.
(%)
I
der
120
80
40
0
function of mounting base temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
50
(A)
I
D
10
10
10
1
3
2
1
Limit R
100
DSon
= V
150
DS
T
/I
mb
D
03am86
(°C)
Rev. 04 — 11 December 2009
200
10
DC
N-channel TrenchMOS SiliconMAX standard level FET
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
t
100 μs
1 ms
10 ms
0
10
p
= 10 μs
2
50
V
DS
(V)
PSMN008-75B
100
03am79
10
3
150
© NXP B.V. 2009. All rights reserved.
T
mb
03aa16
(°C)
200
3 of 12