PSMN008-75B,118 NXP Semiconductors, PSMN008-75B,118 Datasheet - Page 2

• Manufacturer Part Number: PSMN008-75B,118
• Description: MOSFET N-CH 75V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN008-75B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 230W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 122.8nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 75V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0085 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 230000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056399118::PSMN008-75B /T3::PSMN008-75B /T3

NXP Semiconductors
2. Pinning information
Table 2.
[1]
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN008-75B_4
Product data sheet
Pin
1
2
3
mb
Type number
PSMN008-75B
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
It is not possible to make connection to pin 2.
Symbol
G
D
S
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive
drain-source avalanche
energy
Package
Name
Description
gate
drain
source
mounting base; connected to
drain
Description
Conditions
T
T
V
V
t
T
T
t
V
unclamped; R
p
p
j
j
mb
mb
GS
GS
GS
≤ 10 µs; pulsed; T
≤ 10 µs; pulsed; T
≥ 25 °C; T
≤ 175 °C; T
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
Rev. 04 — 11 December 2009
j
≤ 175 °C
j
mb
mb
j(init)
GS
≥ 25 °C; R
= 100 °C; see
= 25 °C; see
= 50 Ω; t
Figure 2
[1]
= 25 °C; I
mb
mb
N-channel TrenchMOS SiliconMAX standard level FET
= 25 °C; see
= 25 °C
Simplified outline
GS
p
= 0.129 ms
D
= 20 Ω
= 63 A; V
Figure 1
Figure 1
SOT404
1
Figure 1
mb
2
and
sup
3
≤ 15 V;
3
and
3
PSMN008-75B
Graphic symbol
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
G
mbb076
© NXP B.V. 2009. All rights reserved.
Max
75
75
20
75
75
240
230
175
175
75
240
395
D
Version
SOT404
S
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
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