PSMN008-75B,118 NXP Semiconductors, PSMN008-75B,118 Datasheet
PSMN008-75B,118
Specifications of PSMN008-75B,118
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PSMN008-75B,118 Summary of contents
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... PSMN008-75B N-channel TrenchMOS SiliconMAX standard level FET Rev. 04 — 11 December 2009 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... Figure °C; see Figure ≤ 10 µs; pulsed °C; see °C; see Figure °C mb ≤ 10 µs; pulsed ° ° j(init Ω; t unclamped 0.129 Rev. 04 — 11 December 2009 PSMN008-75B Graphic symbol mbb076 Version SOT404 Min Max - - and Figure 1 and 3 - 240 - 230 -55 175 -55 175 - 75 ...
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... N-channel TrenchMOS SiliconMAX standard level FET 03am86 120 P der (%) 150 200 0 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature = 100 μ Rev. 04 — 11 December 2009 PSMN008-75B 03aa16 50 100 150 T (°C) mb 03am79 = 10 μ (V) DS © NXP B.V. 2009. All rights reserved. 200 ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN008-75B_4 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET Conditions see Figure 4 mounted on a printed-circuit board; minimum footprint −3 − Rev. 04 — 11 December 2009 PSMN008-75B Min Typ Max - - 0. 03am78 t p δ = ...
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... Figure 9 and °C; see Figure MHz °C; see Figure 1.5 Ω Ω °C G(ext ° see Figure /dt = -100 A/µ ° Rev. 04 — 11 December 2009 PSMN008-75B Min Typ Max Unit 4 0.05 10 µ 500 µ 100 100 mΩ - 6.5 8.5 mΩ - 122 ...
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... Transfer characteristics: drain current as a function of gate-source voltage; typical values 03aa35 5 V GS(th) (V) max − (V) GS Fig 8. Gate-source threshold voltage as a function of junction temperature Rev. 04 — 11 December 2009 PSMN008-75B 03am82 V > DSon 175 ° ° (V) GS 03aa32 max typ min 0 60 ...
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... Fig 10. Normalized drain-source on-state resistance factor as a function of junction temperature 03am85 (pF 100 150 10 Q (nC) G Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 04 — 11 December 2009 PSMN008-75B 03ac63 0 60 120 T (°C) j 03am84 C iss C oss C rss − (V) DS © ...
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... NXP Semiconductors Fig 13. Source current as a function of source-drain voltage; typical values PSMN008-75B_4 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET 100 ( 175 ° ° 0 Rev. 04 — 11 December 2009 PSMN008-75B 03am83 1.5 (V) SD © NXP B.V. 2009. All rights reserved ...
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... N-channel TrenchMOS SiliconMAX standard level FET 2 scale max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA Rev. 04 — 11 December 2009 PSMN008-75B mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2009. All rights reserved. SOT404 ...
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... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number PSMN008-75B separated from data sheet PSMN008_75P_75B-03. PSMN008_75P_75B-03 20040108 (9397 750 12545) PSMN008_75P_75B-02 ...
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... Export might require a prior authorization from national authorities. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS— trademark of NXP B.V. to:salesaddresses@nxp.com Rev. 04 — 11 December 2009 PSMN008-75B © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 11 December 2009 Document identifier: PSMN008-75B_4 ...