PHB45NQ10T,118 NXP Semiconductors, PHB45NQ10T,118 Datasheet - Page 4

• Manufacturer Part Number: PHB45NQ10T,118
• Description: MOSFET N-CH 100V 47A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHB45NQ10T,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 150W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 61nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 47A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0085 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 230000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055802118::PHB45NQ10T /T3::PHB45NQ10T /T3

NXP Semiconductors
5. Thermal characteristics
Table 5.
PHB45NQ10T
Product data sheet
Symbol
R
R
Fig 3.
Fig 5.
th(j-mb)
th(j-a)
I
(A)
DM
10
10
10
10
−1
1
3
2
currents as a function of drain-source voltage
T
Safe operating area; continuous and peak drain
Transient thermal impedance from junction to mounting base as a function of pulse duration
1
mb
Thermal characteristics
R
DSon
= 25 °C; I
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
= V
DS
/I
D
10
DM
DC
is single pulse
Z
(K/W)
th j-mb
10
10
10
10
tp = 10 μs
100 μs
1 ms
10 ms
100 ms
2
−1
−2
−3
1
10
V
Conditions
−6
All information provided in this document is subject to legal disclaimers.
DS
0.2
0.1
0.05
0.02
δ
mounted on printed-circuit board ;
minimum footprint
014aab204
= 0.5
(V)
10
single pulse
−5
10
3
Rev. 02 — 8 July 2010
10
−4
10
−3
Fig 4.
P
10
l
(A)
AS
−2
10
t
10
p
1
2
10
current as a function of avalanche period
Single-shot avalanche rating; avalanche
T
−3
10
N-channel TrenchMOS standard level FET
014aab205
−1
δ =
t
p
(s)
T
t
t
p
T
10
j
1
prior to avalanche = 150 °C
−2
10
Min
-
-
PHB45NQ10T
−1
Typ
-
50
1
© NXP B.V. 2010. All rights reserved.
t
25 °C
AV
014aab216
(ms)
Max
1
-
10
Unit
K/W
K/W
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