PSMN016-100PS,127 NXP Semiconductors, PSMN016-100PS,127 Datasheet - Page 9

• Manufacturer Part Number: PSMN016-100PS,127
• Description: MOSFET N-CH 100V SOT78
• Manufacturer: NXP Semiconductors

Specifications of PSMN016-100PS,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 148W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 96A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 16 mOhm @ 15A, 10V
• Gate Charge Qg: 49 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 28.8 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 96 A
• Power Dissipation: 148 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934064505127

NXP Semiconductors
PSMN016-100PS_1
Product data sheet
Fig 13. Drain-source on-state resistance as a function
Fig 15. Gate-source voltage as a function of gate
R
(mΩ)
V
DSon
(V)
GS
80
60
40
20
10
0
8
6
4
2
0
of drain current; typical values
charge; typical values
0
0
V
GS
(V) = 5.0
15
20 V
20
V
DS
= 50 V
5.2
30
40
45
80 V
Q
All information provided in this document is subject to legal disclaimers.
G
I
001aal317
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(nC)
D
5.5
(A)
10.0
6.0
8.0
60
60
Rev. 01 — 1 March 2010
N-channel 100V 16 mΩ standard level MOSFET in TO220
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
−1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
PSMN016-100PS
1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
© NXP B.V. 2010. All rights reserved.
V
DS
003aaa508
001aal321
(V)
C
C
C
iss
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