BUK7640-100A,118 NXP Semiconductors, BUK7640-100A,118 Datasheet - Page 7

• Manufacturer Part Number: BUK7640-100A,118
• Description: MOSFET N-CH 100V 37A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7640-100A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 37A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 2293pF @ 25V
• Power - Max: 138W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.04 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 37 A
• Power Dissipation: 138000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056027118; BUK7640-100A /T3; BUK7640-100A /T3

NXP Semiconductors
BUK7640-100A
Product data sheet
Fig 13. Gate-source threshold voltage as a function of
Fig 15. Input, output and reverse transfer capacitances
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
V
GS(th)
(nF)
(V)
C
5
4
3
2
1
0
−100
4
3
2
1
0
10
junction temperature
as a function of drain-source voltage; typical
values
I
V
V
D
−2
GS
GS
= 1 mA; V
= 0 V; f = 1 MHz
= 0 V
C
C
C
oss
iss
rss
10
−1
DS
0
= V
maximum
GS
minimum
typical
1
100
(A)
I
F
50
40
30
20
10
10
0
0
T
All information provided in this document is subject to legal disclaimers.
j
V
(°C)
003aaf595
003aaf597
DS
(V)
200
10
Rev. 2 — 20 April 2011
2
T
0.4
j
= 175 °C
Fig 14. Sub-threshold drain current as a function of
Fig 16. Gate-source voltage as a function of gate
V
0.8
(A)
(V)
I
10
10
10
10
10
10
GS
D
10
−1
−2
−3
−4
−5
−6
8
6
4
2
0
V
T
gate-source voltage
charge; typical values
T
T
0
0
j
SDS
j
j
= 25 °C
N-channel TrenchMOS standard level FET
= 25 °C; V
= 25 °C
003aaf599
(V)
1
1.2
10
DS
V
= V
2 %
BUK7640-100A
2
DS
= 14 V
GS
20
typical
3
V
30
DS
© NXP B.V. 2011. All rights reserved.
98 %
4
Q
= 44 V
003aaf596
V
003aaf598
G
GS
(nC)
(V)
40
5
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