BUK7640-100A,118 NXP Semiconductors, BUK7640-100A,118 Datasheet - Page 2

• Manufacturer Part Number: BUK7640-100A,118
• Description: MOSFET N-CH 100V 37A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7640-100A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 40 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 37A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 2293pF @ 25V
• Power - Max: 138W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.04 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 37 A
• Power Dissipation: 138000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056027118; BUK7640-100A /T3; BUK7640-100A /T3

NXP Semiconductors
2. Pinning information
Table 2.
[1]
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BUK7640-100A
Product data sheet
Pin
1
2
3
mb
Type number
BUK7640-100A
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
drain (D)
Symbol Description
G
D
S
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
gate
drain
source
mounting base;
connected to drain
Package
Name
D2PAK
[1]
Description
plastic single-ended surface-mounted package (D2PAK);
3 leads (one lead cropped)
All information provided in this document is subject to legal disclaimers.
Conditions
T
R
T
T
T
T
T
pulsed; T
I
V
D
j
mb
mb
mb
mb
mb
Rev. 2 — 20 April 2011
GS
GS
Simplified outline
≥ 25 °C; T
= 26 A; V
= 25 °C
= 100 °C
= 25 °C; pulsed
= 25 °C
= 25 °C
= 10 V; T
= 20 kΩ
SOT404 (D2PAK)
mb
sup
= 25 °C
j
≤ 175 °C
j(init)
1
≤ 25 V; R
mb
2
= 25 °C; unclamped
3
N-channel TrenchMOS standard level FET
GS
= 50 Ω;
Graphic symbol
BUK7640-100A
mbb076
G
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
© NXP B.V. 2011. All rights reserved.
D
S
175
175
Version
SOT404
Max
100
100
20
37
26
149
138
37
149
31
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
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