BUK7640-100A,118 NXP Semiconductors, BUK7640-100A,118 Datasheet
BUK7640-100A,118
Specifications of BUK7640-100A,118
BUK7640-100A /T3
BUK7640-100A /T3
Related parts for BUK7640-100A,118
BUK7640-100A,118 Summary of contents
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... BUK7640-100A N-channel TrenchMOS standard level FET Rev. 2 — 20 April 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... T = 100 ° °C; pulsed ° °C mb pulsed °C mb ≤ sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 April 2011 BUK7640-100A Graphic symbol mbb076 Version SOT404 Min Max - 100 - 100 - 149 - 138 -55 175 -55 175 - 37 ...
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... Fig 2. 003aaf587 100 W DSS (%) μs 10 μs 100 μ 100 (V) DS Fig 4. All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 April 2011 BUK7640-100A N-channel TrenchMOS standard level FET 100 150 ≥ Normalized continuous drain current as a function of mounting base temperature ...
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... P 0.05 0.02 − −3 10 −7 −5 − All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 April 2011 BUK7640-100A N-channel TrenchMOS standard level FET 003aaf601 25 ° (ms) AV Min Typ - - - 50 003aaf588 t p δ −1 ...
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... °C j measured from source lead soldering point to source bond pad ° ° ° /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 April 2011 BUK7640-100A Min Typ Max Unit 100 - - 4 500 µA - 0.05 10 µ 100 ...
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... Fig 10. Transfer characteristics: drain current as a 003aaf593 (A) D DSon Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 April 2011 BUK7640-100A N-channel TrenchMOS standard level FET 0.1 4.8 5 5.2 5.4 DS(on) (Ω) 0.08 0.06 0.04 ...
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... (V) DS Fig 16. Gate-source voltage as a function of gate ( 175 ° 0.4 0.8 All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 April 2011 BUK7640-100A N-channel TrenchMOS standard level FET −1 −2 − typical −4 −5 − ° gate-source voltage ...
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... REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 April 2011 BUK7640-100A N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION © NXP B.V. 2011. All rights reserved. ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK7640-100A v.2 20110420 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...
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... Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 April 2011 BUK7640-100A N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 20 April 2011 BUK7640-100A N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 20 April 2011 Document identifier: BUK7640-100A ...