BUK7880-55,135 NXP Semiconductors, BUK7880-55,135 Datasheet - Page 7

• Manufacturer Part Number: BUK7880-55,135
• Description: MOSFET N-CH 55V 7.5A SOT223
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7880-55,135

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 80 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 7.5A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 500pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.08 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934050520135; BUK7880-55 /T3; BUK7880-55 /T3

NXP Semiconductors
BUK7880-55
Product data sheet
Fig 10. Normalized drain-source on-state resistance
Fig 12. Sub-threshold drain current as a function of
(A)
I
10
10
10
10
10
10
a
D
2.0
1.5
1.0
0.5
−1
−2
−3
−4
−5
−6
−100
factor as a function of junction temperature
gate-source voltage
I
T
1
D
j
= 25 °C; V
= 5 A; V
2 %
2
GS
DS
0
= 10 V
= V
GS
typical
3
100
98 %
4
T
mb
All information provided in this document is subject to legal disclaimers.
V
003aaf276
003aaf278
GS
(°C)
(V)
200
5
Rev. 3 — 21 April 2011
Fig 11. Gate-source threshold voltage as a function of
Fig 13. Input, output and reverse transfer capacitances
V
GS(th)
(nF)
(V)
C
1.0
0.8
0.6
0.4
0.2
5
4
3
2
1
−100
0
10
junction temperature
as a function of drain-source voltage; typical
values
I
V
D
−2
GS
C
C
C
N-channel TrenchMOS standard level FET
= 1 mA; V
oss
iss
rss
= 0 V; f = 1 MHz
10
−1
DS
0
= V
maximum
minimum
typical
GS
1
BUK7880-55
100
10
© NXP B.V. 2011. All rights reserved.
T
j
V
(°C)
003aaf277
003aaf279
DS
(V)
200
10
2
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