BUK7880-55,135 NXP Semiconductors, BUK7880-55,135 Datasheet - Page 5

• Manufacturer Part Number: BUK7880-55,135
• Description: MOSFET N-CH 55V 7.5A SOT223
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7880-55,135

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 80 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 7.5A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 500pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.08 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934050520135; BUK7880-55 /T3; BUK7880-55 /T3

NXP Semiconductors
6. Characteristics
Table 6.
BUK7880-55
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
V
Dynamic characteristics
C
C
C
t
t
t
t
g
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
fs
(BR)DSS
GS(th)
(BR)GSS
SD
DSon
iss
oss
rss
r
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
gate-source
breakdown voltage
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
transfer conductance
source-drain voltage
reverse recovery time
recovered charge
Conditions
I
I
I
I
I
V
V
V
V
V
V
V
V
V
V
V
T
V
R
V
I
T
I
V
T
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
S
S
j
j
j
DS
DS
GS
GS
GS
GS
GS
GS
DS
DS
GS
DS
DS
GS
G(ext)
= 25 °C
= 5 A; V
≤ 175 °C
= 5 A; dI
≤ 175 °C
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 55 V; V
= 55 V; V
= 0 V; T
= 0 V; T
= 30 V; R
= 25 V; I
= 10 V; V
= -10 V; V
= 10 V; V
= -10 V; V
= 10 V; I
= 10 V; I
= 0 V; V
= -10 V; V
= 10 Ω; T
Rev. 3 — 21 April 2011
GS
S
/dt = -100 A/µs;
DS
DS
DS
j
j
DS
D
D
D
= 25 °C; I
= 25 °C; I
= 0 V; T
GS
GS
DS
DS
L
DS
DS
DS
= 5 A; T
= 5 A; T
= 5 A; T
= V
= V
= V
= 4.3 Ω; V
GS
GS
= 25 V; f = 1 MHz;
mb
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
= 30 V; T
= 0 V; T
= 0 V; T
GS
GS
GS
= 25 °C; I
; T
; T
; T
j
≥ -55 °C;
j
j
j
G
G
= 25 °C
= 150 °C
= 25 °C
j
j
j
j
j
j
j
= 1 mA
= -1 mA
= 150 °C
= 25 °C
= -55 °C
j
j
GS
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
j
j
j
= 25 °C
= -55 °C
≥ -55 °C;
= 10 V;
D
= 7 A
N-channel TrenchMOS standard level FET
Min
55
50
1.2
2
-
-
-
-
-
-
-
-
-
16
16
-
-
-
-
-
-
-
1
-
-
-
BUK7880-55
Typ
-
-
-
3
-
0.05
-
0.04
0.04
-
-
-
65
-
-
365
110
60
9
15
18
12
4
0.85
38
0.2
© NXP B.V. 2011. All rights reserved.
135
Max
-
-
-
4
4.4
10
100
1
1
10
10
148
80
-
-
500
85
14
25
27
18
-
1.1
-
-
Unit
V
V
V
V
V
µA
µA
µA
µA
µA
µA
mΩ
mΩ
V
V
pF
pF
pF
ns
ns
ns
ns
S
V
ns
µC
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