BUK7880-55,135 NXP Semiconductors, BUK7880-55,135 Datasheet - Page 4

• Manufacturer Part Number: BUK7880-55,135
• Description: MOSFET N-CH 55V 7.5A SOT223
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7880-55,135

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 80 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 7.5A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 500pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.08 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934050520135; BUK7880-55 /T3; BUK7880-55 /T3

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK7880-55
Product data sheet
Symbol
R
R
Fig 5.
th(j-sp)
th(j-a)
Transient thermal impedance from junction to solder point as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from
junction to solder point
thermal resistance from
junction to ambient
Z
(K/W)
th(j-mb)
10
10
10
10
−1
−2
1
2
10
−6
All information provided in this document is subject to legal disclaimers.
δ = 0.5
0.05
0.02
0.2
0.1
0
10
−5
Conditions
board
Mounted on FR4 PCB,
mounting pad for drain 6.5 cm
mounted on any printed-circuit
Rev. 3 — 21 April 2011
10
−4
10
−3
10
P
−2
10
t
p
−1
T
N-channel TrenchMOS standard level FET
003aaf271
1
δ =
t
p
(s)
T
t
t
p
2
10
Min
-
-
BUK7880-55
Typ
12
-
© NXP B.V. 2011. All rights reserved.
Max
15
70
Unit
K/W
K/W
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