IRFIB5N65A Vishay, IRFIB5N65A Datasheet - Page 5

• Manufacturer Part Number: IRFIB5N65A
• Description: MOSFET N-CH 650V 5.1A TO220FP
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of IRFIB5N65A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 930 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 5.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 48nC @ 10V
• Input Capacitance (ciss) @ Vds: 1417pF @ 25V
• Power - Max: 60W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.93 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5.1 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFIB5N65A

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0.01
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0.1
10
0.00001
1
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.0001
75
SINGLE PULSE
100
0.001
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.01
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
DS
GS
t
R
d(on)
Pulse Width
Duty Factor
1. Duty factor D =
2. Peak T = P
G
Notes:
0.1
10V
V
GS
t
r
V
J
DS
IRFIB5N65A
µs
DM
x Z
t / t
1
thJC
D.U.T.
P
2
1
t
DM
d(off)
+ T
R
D
C
t
1
t
f
t
2
+
-
V
DD
5
10