IRFIB5N65A Vishay, IRFIB5N65A Datasheet - Page 4

• Manufacturer Part Number: IRFIB5N65A
• Description: MOSFET N-CH 650V 5.1A TO220FP
• Manufacturer: Vishay
• Series: HEXFET®r

Specifications of IRFIB5N65A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 930 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 5.1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 48nC @ 10V
• Input Capacitance (ciss) @ Vds: 1417pF @ 25V
• Power - Max: 60W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.93 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5.1 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFIB5N65A

IRFIB5N65A
4
2 0 0 0
1 6 0 0
1 2 0 0
8 0 0
4 0 0
100
0.1
10
0
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
0.2
1
Drain-to-Source Voltage
T = 150 C
V
V
J
D S
SD
0.4
Forward Voltage
C
C
C
V
C
C
C
, D rain-to-S ource V oltage (V )
,Source-to-Drain Voltage (V)
o s s
rs s
is s
G S
is s
rss
o s s
°
1 0
= 0 V ,
= C
= C
= C
0.6
g s
g d
d s
+ C
+ C
T = 25 C
g d
g d
J
f = 1 M H z
0.8
, C
1 0 0
°
d s
S H O R T E D
V
1.0
GS
= 0 V
1 0 0 0
1.2
A
100
0.1
20
16
12
Fig 8. Maximum Safe Operating Area
10
8
4
0
1
0
10
Fig 6. Typical Gate Charge Vs.
I =
T
T
Single Pulse
D
C
J
= 25 C
= 150 C
5.2A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
DS
10
°
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
100
20
BY R
DS(on)
V
V
V
DS
DS
DS
FOR TEST CIRCUIT
30
SEE FIGURE
10us
100us
1ms
10ms
1000
www.irf.com
= 520V
= 325V
= 130V
400V
40
13
10000
50